| PART |
Description |
Maker |
| K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4 |
128Mb F-die SDRAM Specification
128Mb E-die SDRAM Specification
|
Samsung Electronic
Samsung semiconductor
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S280432F K4S280432F-TC75 K4S280432F-TL75 K4S2816 |
RES, 16.9, 1/16W, TKF, 1%, 0603
TV 11C 11#12 PIN RECP
128MB F-DIE SDRAM SPECIFICATION
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HYB39S128400CT-7 HYB39S128160CT-7 HYB39S128800CT-7 |
128Mbit Synchronous DRAMs
SDRAM Components - 128Mb (16Mx8) PC133 3-3-3
SDRAM Components - 128Mb (8Mx16) PC133 3-3-3
SDRAM Components - 128Mb (32Mx4) PC133 3-3-3
128-MBit Synchronous DRAM
|
Infineon
|
| HYM7V73A1601BTFG HYM7V73A1601BTFG-75 |
x72 SDRAM Module x72内存模块
16Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 128MB
|
TE Connectivity, Ltd.
|
| K4S161622H |
16Mb H-die SDRAM Specification
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
| M366S1724CT0-C1L M366S1724CT0-C1H |
PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HY5V22GF-H HY5V22GF-P |
SDRAM - 128Mb
|
Hynix Semiconductor
|
| NT5SV8M16CT NT5SV16M8CT |
(NT5SVxxMxxCT) 128Mb SDRAM
|
Nanya Techology
|
| S80016LK7 |
128Mb :x4 x8 x16 SDRAM 3.3V
|
SPECtek
|
| HYM71V16M635HCLT6-H |
SDRAM - SO DIMM 128MB
|
Hynix Semiconductor
|
