| PART |
Description |
Maker |
| CY7C421-15AXC CY7C421-20VXC |
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 15 ns, PQFP32
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 20 ns, PDSO28
|
Cypress Semiconductor, Corp.
|
| AT93C56AY1-10YU-1.8 AT93C56AY6-10YH-1.8 AT93C56A-1 |
Three-wire Serial EEPROM 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16)
|
ATMEL Corporation
|
| IDT72V3643L10PF IDT72V3633 IDT72V363310PF IDT72V36 |
From old datasheet system
3.3 VOLT CMOS SyncFIFO WITH BUS-MATCHING 256 x 36, 512 x 36, 1,024 x 36
512 x 36 SyncFIFO, 3.3V
|
IDT[Integrated Device Technology]
|
| BL93C56 |
2K bits (256 X 8 or 128 X 16)/ 4K bits (512 X 8 or 256 X 16) Three-wire Serial EEPROM
|
SHANGHAI BELLING CO., LTD.
|
| AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op.
Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400B KGD (Known Good Die Supplement)
INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Electronic Theatre Controls, Inc.
|
| CY7C4201-15AXC CY7C4201-15JXC CY7C4221-25AC CY7C42 |
4K X 9 OTHER FIFO, 15 ns, PQFP32
8K X 9 OTHER FIFO, 8 ns, PQCC32
64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs 8K X 9 OTHER FIFO, 8 ns, PQFP32
64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs 512 X 9 OTHER FIFO, 10 ns, PQFP32
64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs 4K X 9 OTHER FIFO, 10 ns, PQCC32
4K x 9 Synchronous FIFOs(4Kx9同步先进先出（FIFO
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AM29LV400B100WACB AM29LV400B150WACB AM29LV400B90RW |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 150ns
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 90ns
|
Advanced Micro Devices
|
| CY14V104LA |
4-Mbit (512 K x 8 / 256 K x 16) nvSRAM
|
Cypress Semiconductor
|
| MS7200-25FC |
256 x 9, 512 x 9, 1K x 9 CMOS FIFO
|
Mosel Vitelic
|
| CY14B104NA-BA20XI CY14B104NA-BA20XIT CY14B104NA-BA |
4-Mbit (512 K ? 8/256 K ? 16) nvSRAM
4-Mbit (512 K × 8/256 K × 16) nvSRAM
|
Cypress Semiconductor
http://
|
