| PART |
Description |
Maker |
| UPA1855 UPA1855GR-9JG |
Nch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR
|
NEC
|
| UPA2450 UPA2450TL UPA2450TL-E1 |
Nch enhancement-type MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA2753GR UPA2753GR-E1 UPA2753GR-E2 |
Nch enhancement-type MOSFET (Dual type)
SWITCHING N-CHANNEL POWER MOSFET
|
NEC[NEC]
|
| 2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| UPA1720G-E1 UPA1720G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|
| UPA1723G-E1 UPA1723G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|
| NP22N055IHE NP22N055HHE NP22N055HHE-AZ NP22N055 NP |
Nch MOS FET for High-speed switching
MOS FIELD EFFECT TRANSISTOR
22 A, 55 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
|
http://
NEC[NEC]
Cypress Semiconductor, Corp.
|
| UPA1952 UPA1952TE UPA1952TE-T2 UPA1952TE-T1 |
Pch enhancement-type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1918 UPA1918TE UPA1918TE-T2 UPA1918TE-T1 |
Pch enhancement-type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1919 UPA1919TE UPA1919TE-T2 UPA1919TE-T1 |
Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
