PART |
Description |
Maker |
NTE103ANPN |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE
|
NTE102A |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE[NTE Electronics]
|
ESDA14V2-2BF ESDA14V2-2BF3 ESDA14V2-2BX |
Quad bidirectional Transi array for ESD protection
|
STMicroelectronics
|
Q60103-X151-D Q60103-X151-F1 Q60103-X151-G Q60103- |
24 V, 200 mA, PNP germanium transistor PNP GERMANIUM TRANSISTORS 进步党锗晶体
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Siemens Semiconductor G...
|
MJE15032 MJE15033 ON2013 |
8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS From old datasheet system
|
Motorola, Inc ONSEMI[ON Semiconductor]
|
D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS From old datasheet system
|
Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] http://
|
2N3055MJ2955 MJ2955 2N3055 ON0038 2N3055_MJ2955 |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 120 VOLTS 115/ 180 WATTS 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 15安培功率晶体管互补性的芯片6015 Complementary SlllconPower Translstors From old datasheet system
|
ON Semiconductor Motorola Inc MOTOROLA[Motorola, Inc]
|
1N2929 |
Germanium Diode
|
New Jersey Semi-Conductor Products, Inc.
|
1N3717 1N3718 1N3719 1N3720 |
Germanium Diodes
|
New Jersey Semi-Conductor Products, Inc.
|
2N200 |
P-N-P GERMANIUM TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
|