PART |
Description |
Maker |
KM616U4000C |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
CMP0417AA0-F70I CMP0417AA0-I |
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
EM611FP16E-55LF EM611FU16E-55LF EM611FU8E-55LF EM6 |
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
|
http:// Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
|
EM640FV16FW |
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
KM68U2000 KM68V2000 |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K6F4016U4G |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
V53C104Z-10L V53C104K-10 V53C104K-10L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 高性能,低功耗,256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
HY62SF16404D HY62SF16404D-DF85I |
256K X 16 STANDARD SRAM, 85 ns, PBGA48 High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|