PART |
Description |
Maker |
TBB100211 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB501CAS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB304MDW-TL-E BB304M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB101MAU-TL-E BB101M |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB503CCS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1010 |
Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB504C |
Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
|
Renesas Electronics Corporation
|
EMA2 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Built-In Biasing Resistors, R1 = R2 = 47kW.
|
Rohm
|
DTC143EKAT146 |
Built-In Biasing Resistors, R1 = R2 = 4.7kW.
|
Rohm
|
BB601M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
|
BB505M BB505MES |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|