| PART |
Description |
Maker |
| APT6045CVR APT5024BVFR |
POWER MOS V 600V 11.8A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6045BVR |
POWER MOS V 600V 15A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6015JVR |
POWER MOS V 600V 35A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT60M75L2LL |
POWER MOS 7 600V 73A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT6029BLL |
POWER MOS 7 600V 21A 0.290 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT6029BFLL APT6029SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 21A 0.290 Ohm
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT6013JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 600V 39A 0.130 Ohm
|
Advanced Power Technology, Ltd.
|
| APT6010LLL APT6010B2LL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 54A 0.100 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STH10NC60FI STW10NC60 STH10NC60 |
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?┥I MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?II MOSFET
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMeshII MOSFET
N-CHANNEL Power MOSFET
N-CHANNEL Power MOS MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET N沟道600V 0.6ohm - 10A TO-247/ISOWATT218 PowerMesh第二MOSFET的⑩
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
