| PART |
Description |
Maker |
| GBPC25 GBPC GBPC35 GBPC12 GBPC15 GBPC2504 GBPC3504 |
12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers
Aluminum Polymer Radial Lead Capacitor; Capacitance: 680uF; Voltage: 6.3V; Case Size: 10x13 mm; Packaging: Bulk
12/ 15/ 25/ 35 Ampere Glass Passivated Bridge Rectifiers
25 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电5A，重复反相电压峰00V)) 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电35A，重复反相电压峰00V)) 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电35A，重复反相电压峰00V)) 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电35A，重复反相电压峰00V)) 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers 12555安培玻璃钝化整流
25 Ampere Glass Passivated Bridge Rectifiers(?荤????妗ユ?娴??锛?钩???娴??娴?5A锛??澶???哥???嘲??00V))
15 Ampere Glass Passivated Bridge Rectifiers(?荤????妗ユ?娴??锛?钩???娴??娴?5A锛??澶???哥???嘲??00V))
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| 6A8G 6A2G 6A6G 6A4G 6A10G |
GLASS PASSIVATED GENERAL PURPOSE RECTIFIERS
|
Shenzhen Taychipst Electronic Co., Ltd
|
| NSF8MT NSF8AT NSF8BT NSF8DT NSF8GT NSF8JT NSF8KT |
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER
|
GE[General Semiconductor]
|
| NSB8JT-E3-81 NS8JT-E3-45 NSB8JT-E3-45 NSF8JT-E3-45 |
Glass Passivated General Purpose Plastic Rectifier
|
Vishay Siliconix
|
| NS8GT NS8BT NS8AT NS8DT NS8MT NS8JT NS8KT |
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER
|
GE Security, Inc.
GE[General Semiconductor]
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| CR5-060 CR5-080 CR5-020 CR5-010 CR5-100 CR5-040 CR |
GLASS PASSIVATED JUNCTION GENERAL PURPOSE SILICON RECTIFIER 5.0 AMP, 100 THRU 1200 VOLTS
|
Central Semiconductor Corp
Central Semiconductor C...
|
| AB80-C1500RG AB380-C1500RG AB250-C1500RG AB40-C150 |
200 V, 1.5 A Avalanche glass passivated bridge rectifier
900 V, 1.5 A Avalanche glass passivated bridge rectifier
600 V, 1.5 A Avalanche glass passivated bridge rectifier
100 V, 1.5 A Avalanche glass passivated bridge rectifier
|
EIC discrete Semiconductors
|
| 1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
Diodes
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
|
Vishay Beyschlag
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
