| PART |
Description |
Maker |
| K7S3218T4C K7S3236T4C K7S3236T4C-FECI45 K7S3236T4C |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7P323666M K7P321866M |
1Mx36 & 2Mx18 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7P321874C |
1Mx36 & 2Mx18 SRAM
|
Samsung Electronics
|
| K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-F |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7I321884C K7I323684C |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| IS61DDPB42M18A IS61DDPB42M18A/A1/A2 IS61DDPB41M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7N321801M K7N323601M DSK7N323601M |
1Mx36 & 2Mx18-Bit Pipelined NtRAM
1Mx36 & 2Mx18-Bit Pipelined NtRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| CY7C1543KV18-400BZC CY7C1545KV18-450BZXI |
Sync SRAM; Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| IS61QDP2B21M36A1 IS61QDP2B21M36A2 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7M321835C-PC65 K7M321835C-PI65 K7M321835C-QC65 K7 |
1Mx36 & 2Mx18 Flow-Through NtRAM
|
Samsung semiconductor
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
