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K7S3236U4C - 1Mx36 & 2Mx18 QDR II b4 SRAM

K7S3236U4C_4368475.PDF Datasheet


 Full text search : 1Mx36 & 2Mx18 QDR II b4 SRAM
 Product Description search : 1Mx36 & 2Mx18 QDR II b4 SRAM


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K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C 1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
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K7R323684C K7R320984C K7R321884C 1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM
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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
K7P321874C K7P323674C K7P323674C-HC300 1Mx36 & 2Mx18 SRAM
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Samsung semiconductor
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Samsung semiconductor
K7N321845M-QC25 K7N321845M-QC20 K7N321801M-QC20 K7 1Mx36 & 2Mx18-Bit Pipelined NtRAM
1Mx36 & 2Mx18 Flow-Through NtRAM
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K7N323601M-QC20 K7N323601M DSK7N323601M K7N323645M 1Mx36 & 2Mx18 Flow-Through NtRAM
1Mx36 & 2Mx18-Bit Pipelined NtRAM
Samsung Electronic
SAMSUNG[Samsung semiconductor]
IS61DDPB42M18A IS61DDPB42M18A/A1/A2 IS61DDPB41M36A 2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
Integrated Silicon Solution, Inc
K7N321801M K7N323601M DSK7N323601M 1Mx36 & 2Mx18-Bit Pipelined NtRAM
1Mx36 & 2Mx18-Bit Pipelined NtRAM 1Mx36
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
K7R323682MK7R321882MK7R320882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRII b2 SRAM Data Sheet
Samsung Electronic
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
IDT
http://
Integrated Device Technology, Inc.
 
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