| PART |
Description |
Maker |
| ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD
170 MHz in-system prommable high density PLD
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes
In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI2192VE-135LT128 ISPLSI2192VE-180-L-T128 ISPL |
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
RELAY SSR 110A 240VAC AC INPUT
3.3V In-System Programmable SuperFASTHigh Density PLD
|
LATTICE[Lattice Semiconductor]
LatticeSemiconductor
Lattice Semiconductor Corporation
|
| SCF10000 SCF5000 SCF7500 SCF12500 SCF2500 |
High Voltage,High Density Fast Recovery Rectifier(反向电压2500V，温5℃时平均整流电流0.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压12500V，温5℃时平均整流电流0.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压7500V，温5℃时平均整流电流0.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压10000V，温5℃时平均整流电流0.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压5000V，温5℃时平均整流电流0.5A,高压，高密度，快速恢复整流器)
FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Semtech Corporation
|
| ISPLSI2064V-100LJ84 ISPLSI2064V-100LJ84I ISPLSI206 |
3.3V High Density Programmable Logic
3.3V High Density Programmable Logic 3.3高密度可编程逻辑
3.3V High Density Programmable Logic EE PLD, 15 ns, PQCC84
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| ISPLSI1032 ISPLSI1032-60LG_883 ISPLSI1032-80LJ ISP |
In-System Programmable High Density PLD EE PLD, 17 ns, PQCC84
High-Density Programmable Logic
|
Lattice Semiconductor, Corp.
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
|
| ATV2500B-15KM/883 ATV2500BL-20KM/883 ATV2500BQL-30 |
High-Speed High-Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDIP40
High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 15 ns, CQCC44
High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 25 ns, CQCC44
High-Speed High-Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PQCC44
High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 25 ns, CDIP40
High-Speed High-Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PDIP40
ER 4C 4#8 SKT RECP BOX
Seals
Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Aluminum Alloy; Series:MS3102; No. of Contacts:14; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Gender:Female RoHS Compliant: No
Circular Connector; No. of Contacts:14; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:22-19 RoHS Compliant: No
ER 14C 14#16 SKT RECP
CONTROL KNOB RoHS Compliant: Yes
ER 3C 3#8 SKT RECP BOX
ER 7C 7#16 PIN RECP
ER 3C 1#16 2#8 PIN RECP BOX
ER 9C 9#16 PIN RECP
|
Atmel, Corp.
Atmel Corp.
http://
ATMEL Corporation
|
| SCHJ22.5K SCHJ15K SCHJ45K SCHJ37.5K |
High Voltage,High Density Standard Recovery Rectifier(反向电压45000V，温5℃时平均整流电流50mA,高压，高密度，标准恢复整流器) 高电压，高密度标准恢复整流（反向电压45000V，温5℃时平均整流电流0mA，高压，高密度，标准恢复整流器）
High Voltage,High Density Standard Recovery Rectifier(反向电压37500V，温5℃时平均整流电流50mA,高压，高密度，标准恢复整流器)
High Voltage,High Density Standard Recovery Rectifier(反向电压22500V，温5℃时平均整流电流50mA,高压，高密度，标准恢复整流器)
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Semtech Corporation
|
| PC825 PC845 PC815 PC835 |
(PC815 - PC845) High Sensitivity / High Density Mounting Type Photocoupler
High Sensitivity, High Density Mounting Type Photocoupler
|
SHARP[Sharp Electrionic Components]
|
| ISPLSI5256VE-125LT100I ISPLSI5256VE-100LF256I ISPL |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
EE PLD, 10 ns, PBGA256
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns.
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| ISPLSI5512VE-155LF256 ISPLSI5512VE-155LB272 ISPLSI |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns.
EE PLD, 10 ns, PBGA388
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
|
LATTICE SEMICONDUCTOR CORP
|
