| PART |
Description |
Maker |
| ISPLSI2128VL-100LB100 ISPLSI2128VL-100LB208 ISPLSI |
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
Linear Motion Control; Series:LCL; Track Resistance:5kohm; Resistance Tolerance:20%; Power Rating:3W; Operating Temperature Range:-30 C to C; Resistor Element Material:Conductive Plastic RoHS Compliant: Yes
Linear Motion Control; Series:LCP8; Track Resistance:10kohm; Resistance Tolerance: /-15%; Power Rating:0.2W; Operating Temperature Range:-30 C to 105 C; Resistor Element Material:Conductive Plastic RoHS Compliant: Yes EE PLD, 13 ns, PBGA208
Resistors, Variable sliding; Series:LCP15; Track Resistance:10kohm; Resistance Tolerance: /-10%; Power Rating:0.5W; Operating Temperature Range:-30 C to 105 C; Resistor Element Material:Conductive Plastic RoHS Compliant: Yes EE PLD, 13 ns, PBGA100
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8.5 ns, PBGA208
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP176
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8.5 ns, PQFP100
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8.5 ns, PBGA100
|
LATTICE[Lattice Semiconductor]
LatticeSemiconductor
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD
170 MHz in-system prommable high density PLD
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes
In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| MCN51-8S3-PFA MCN51-16P2-DS MCN51-16P2-PFA MCN51-1 |
CAP 0.1UF 50V 20% Z5U RAD.20 .20X.20 BULK 高电流，高密度，电源连接
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高电流，高密度，电源连接
High Current, High Density, Power Connectors 高电流，高密度，电源连接
High Current / High Density / Power Connectors
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| DX30M-68-CV DX30M-14-CV DX30M-20-CV DX30M-26-CV DX |
DXM SERIES HIGH-DENSITY I/O CONNECTOR
|
HIROSE[Hirose Electric]
|
| 634-015-563-010 634-015-563-020 634-015-563-130 63 |
634 SERIES HIGH DENSITY SUBMINIATURE D CONNECTOR
|
List of Unclassifed Man...
|
| 809-190-15 |
Mighty Mouse and Series 811 High Density
|
Glenair, Inc.
|
| SMA5J30 SMA5J30A SMA5J33 SMA5J33A SMA5J36 SMA5J36A |
High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors
High Power Density Surface Mount TRANSZORB庐 Transient Voltage Suppressors
High Power Density Surface Mount TRANSZORB㈢ Transient Voltage Suppressors
|
Vishay Siliconix
|
| ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
In-System Programmable High Density PLD
100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| STW80N06-10 4868 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| L60060C-AC L60030C L60030C-1C L60030C-1PQ L60030C- |
CAP 0.01UF 50V 10% X7R SMD-0805 TR-7-PA SN100
Class CC/CD and Midget Fuse Blocks CC CD和侏儒保险丝
RTS Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 15V; Power: 2W; Assembly; High Power Density; Optional Continuous Short Circuit Protected; Efficiency to 85% CC CD和侏儒保险丝
|
LITTELFUSE[Littelfuse]
Littelfuse, Inc.
|
| 600-052 600-052-1 600-058 600-090-1 |
Series 811 Mighty Mouse High Density (HD) Contacts and Tools Band-Master Advanced Termination System Bands and instructions
|
Glenair, Inc.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
