PART |
Description |
Maker |
NESG210833 NESG210833-T1B |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
Renesas Electronics Corporation
|
NESG240033 NESG240033-A NESG240033-T1B NESG240033- |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
NEC
|
NESG240034-T1 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
Renesas Electronics Corporation
|
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
2SC3545 2SC3545L 2SC3545R 2SC3545-L 2SC3545R-T1B 2 |
UHF OSCILLTOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD For UHF tuner, MIXER and OSC. TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | SOT-346
|
NEC Corp.
|
2SC3841 2SC3841P 2SC3841Q 2SC3841T62 2SC3841T64 2S |
For UHF tuner, MIXER and OSC. UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-346 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 12V的五(巴西)总裁| 30mA的一(c)|的SOT - 346
|
NEC[NEC] NEC Corp. NEC, Corp.
|
2SC4186 |
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC
|
NESG2030M04-T2 NESG2030M04 |
NONLINEAR MODEL NPN SiGe HIGH FREQUENCY TRANSISTOR NPN SiGe HIGH FREQUENCY TRANSISTOR npn型硅锗高频晶体管
|
NEC[NEC] NEC, Corp.
|
THN6501 |
NPN SiGe RF TRANSISTOR npn型硅锗射频晶体管
|
Tachyonics Co,. Ltd.
|
BFP640 |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA
|
Infineon
|
BLW34 |
UHF Linear power transistor(UHF 线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR UHF Linear power transistor(UHF 线性功率晶体管)
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|