| PART |
Description |
Maker |
| GS880Z18-11 GS880Z18-66 GS880Z36T-100 GS880Z36T-10 |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
| GS882Z36B-100 GS882Z36B-80 GS882Z36B-66I GS882Z18B |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 8MB的流水线和流量，通过同步唑静态存储器
|
Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
|
| GS881Z36T-100I GS881Z36T-11I GS881Z36T-66T |
256K X 36 ZBT SRAM, 18 ns, PQFP100 TQFP-100
8Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI Technology, Inc.
http://
|
| IC61SF25636T IC61SF25636D IC61SF25632T IC61SF25632 |
SYNCHRONOUS STATIC RAM, Flow Through
From old datasheet system
8Mb SyncBurst Flow through SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| GS882Z18AB-250 GS882Z18AB-133 GS882Z18AD-133 GS882 |
250MHz 5.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
200MHz 6.5s 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| MT55L512L18F |
8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
| MT58L512L18F MT58L256L32F MT58L256V32F MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| MT58L256L36D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
|
Micron Technology
|
| MT58L1MV18D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8MB的：12k × 1856 × 32/36 3.3V的I / O的流水线，双氰胺SYNCBURST的SRAM
|
Micron Technology, Inc.
|
| GS8320Z18T-166IV GS8320Z18T-166V GS8320Z18GT-133IV |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
