PART |
Description |
Maker |
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYM72V1625GS-60 HYM72V1625GS-50 HM72V166 HYM72V162 |
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 50 ns, DMA168 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 16M x 72-Bit EDO-DRAM Module (ECC - Module) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
HYB25D256160BF-7 HYB25D256160BEL-7F |
16M X 16 DDR DRAM, 0.75 ns, PBGA60 16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INFINEON TECHNOLOGIES AG
|
KMM53216000BV |
16M x 32 DRAM SIMM(16M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB |
16M x 4-Bit Dynamic RAM High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70 16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
|
Siemens Semiconductor Group SIEMENS AG Infineon Technologies AG
|
KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT |
8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66 8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
|
Infineon Technologies AG
|
IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
HY5PS56821LF-C4 HY5PS56821LF-C5 HY5PS56821LF-E3 HY |
256Mb DDR2 SDRAM 64M X 4 DDR DRAM, PBGA60 16M X 16 DDR DRAM, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
MB8516SR72CA-103LDG MB8516SR72CA-102DG MB8516SR72C |
16M x 72Bit Synchronous DRAM DIMM 16M X 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM
|
Fujitsu Component Limited. Fujitsu Limited
|
HY57V561620 HY57V561620LT-8 HY57V561620LT-P HY57V5 |
4Banks x 4M x 16Bit Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor, Inc. HYNIX[Hynix Semiconductor]
|