| PART |
Description |
Maker |
| 5962-8851201QEA |
Improved Low-Power, CMOS Analog Switches with Latches 收发
|
Rochester Electronics, LLC
|
| DG421C/D DG425C/D DG423C/D DG425CY DG425CJ DG423 D |
Improved Low-Power / CMOS Analog Switches with Latches
Improved Low-Power, CMOS Analog Switches with Latches
|
Maxim Integrated Products, Inc.
|
| DG408 DG409 |
Improved, 16-Channel CMOS Analog Multiplexers(改进通道CMOS模拟多路复用
Improved, Dual 10 Channel CMOS Analog Multiplexers(改进型双10通道CMOS模拟多路转换
|
Maxim Integrated Products, Inc.
|
| NCV7341D20G |
Improved High Speed, Low Power CAN Transceiver
|
ON SEMICONDUCTOR
|
| DG308BAK DG308BAK_883 DG309BAK_883 DG309BAK DG309B |
Improved Quad CMOS Analog Switches
|
Vishay Siliconix
|
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AD73311 |
Low Cost, Low Power CMOS General Purpose Analog Front End Processor(浣?????浣?????CMOS???妯℃????澶????
|
Analog Devices, Inc.
|
| DG406AK DG406CJ DG409C_D DG409CJ DG407DJ DG407DN D |
IMPROVED, 16-CHANNEL/DUAL 8-CHANNEL, CMOS ANALOG MULTIPLEXERS
IMPROVED, 8-CHANNEL/DUAL 4-CHANNEL, CMOS ANALOG MULTIPLEXERS
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
| AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM（带单片使能
2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
