| PART |
Description |
Maker |
| 2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system
P-channel MOS FET (-60V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SK439 2SK439E K439 |
Silicon N Channel MOS FET
Silicon N-Channel MOS FET 硅N沟道场效应晶体管
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK
2SK439
|
Hitachi,Ltd.
Sanyo Semicon Device
Hitachi Semiconductor
|
| IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|47SMD
|
IXYS, Corp.
|
| IRGC14C40LD IRGC14C40LC IRGC14C40LB IRGC14C40LBPBF |
TRANSISTOR | IGBT | N-CHAN | 430V V(BR)CES | CHIP
14 A, 370 V, N-CHANNEL IGBT
|
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展|5A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五（巴西）国际消费电子展|9A一（c）|园区
|
Electronic Theatre Controls, Inc.
OKI SEMICONDUCTOR CO., LTD.
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
|
| 2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH SWITCHING
P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
