| PART |
Description |
Maker |
| FQU5N40TU |
400V N-Channel QFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 3.4 A, 400 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
Fairchild Semiconductor, Corp.
|
| STGP18N40LZ STGB18N40LZ-1 STGD18N40LZ-1 STGD18N40L |
25 A, 420 V, N-CHANNEL IGBT, TO-251
EAS 180 mJ - 390 V - internally clamped IGBT
|
ST Microelectronics
http://
STMicroelectronics
|
| FQU5N40 FQD5N40 FQD5N40TF FQD5N40TM |
400V N-Channel QFET
400V N-Channel MOSFET
400V N-Channel MOSFET(漏源电压00V、漏电流.4A的N沟道增强型MOS场效应管) 3.4 A, 400 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IXGN400N60A3 |
400 A, 600 V, N-CHANNEL IGBT MINIBLOC-4
|
IXYS, Corp.
|
| GP400LSS12 |
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 10uF; Voltage: 160V; Case Size: 18x20 mm; Packaging: Bulk 400 A, 1200 V, N-CHANNEL IGBT
Single Switch IGBT Module
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| NGP8203N |
Ignition IGBT 20 A, 400 V, N-Channel TO-220
Ignition IGBT 20 A, 400 V, N−Channel TO−220
|
ONSEMI[ON Semiconductor]
|
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| STD5N20 3093 |
N - CHANNEL 200V - 0.7W - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.7 - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
From old datasheet system
|
SGS Thomson Microelectronics
STMicroelectronics
|
| ULB122 ULB122G-XX-TM3-T ULB122G-B6-TM3-T |
NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
0.8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-251
|
UNISONIC TECHNOLOGIES CO LTD
|
| CT30TM-8 |
128 x 64 pixel format, LED Backlight available 130 A, 400 V, N-CHANNEL IGBT, TO-220F
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT
|
IXYS Corporation
|
|
