| PART |
Description |
Maker |
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| 1214-300V |
300 Watts - 50 Volts, 330渭s, 10% Radar 1200 - 1400 MHz
300 Watts - 50 Volts, 330μs, 10% Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| MAAMSS0045 MAAMSS0045TR-3000 MAAMSS0045SMB |
1400 MHz - 2000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HIGH DYNAMIC RANGE LOW NOISE AMPLIFIER 1400 - 2000 MHZ
|
MACOM[Tyco Electronics]
|
| ACLM-4603HC88R-RC |
1200 MHz - 1400 MHz RF/MICROWAVE LIMITER ROHS COMPLIANT, CASE C88
|
Sumida, Corp.
|
| HMC936LP6E |
1200 MHz - 1400 MHz, 360 deg RF/MICROWAVE DIGITALLY CONTROLLED PH SHFTR 6 X 6 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, 28 PIN
|
Hittite Microwave, Corp.
|
| 1214-300 |
300 W, 50 V, 1200-1400 MHz common base transistor
BJT
|
GHz Technology
|
| 1214-110M |
110 Watts - 50 Volts, 330μs, 10% Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| 1214-300 |
300 Watts - 50 Volts, 100us, 10% Radar 1200 1400 MHz
|
ADPOW[Advanced Power Technology]
|
| UMIL60 |
60 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz
UHF 225-400 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 8; Gain (dB): 0; Vcc (V): 28; Cob (pF): 70; fO (MHz): 0; Case Style: 55HW-2 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Vishay Semiconductors
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| SA5200 SA5200D |
RF dual gain-stage 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
|
