| PART |
Description |
Maker |
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| CGHV14800F-AMP CGHV14800-TB |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| CGHV14500 CGHV14500F CGHV14500F-AMP CGHV14500F-TB |
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| HMC936LP6E |
1200 MHz - 1400 MHz, 360 deg RF/MICROWAVE DIGITALLY CONTROLLED PH SHFTR 6 X 6 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, 28 PIN
|
Hittite Microwave, Corp.
|
| LH-FSLH-S130C-0406A FSLH-S130C |
2012 Size 1200/1400 MHz Chip Multilayer Splitter/Combiner
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| PH1214-100EL |
1200-1400 MHz,100 W, 2 ms pulse,radar pulsed power transistor
|
MA-Com
|
| 2301 |
2.3 GHz Class C, Common Base; fO (MHz): 0; P(out) (W): 1.5; P(in) (W): 0.24; Gain (dB): 8.5; Vcc (V): 20; Cob (pF): 4; Case Style: 55BT-1 S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
1.5 Watt - 20 Volts, Class C Microwave 2300 MHz
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
GHZTECH[GHz Technology]
GHz Technology, Inc.
|
| TO-0812LN |
Plug-In Low Noise Amplifier 800 to 1200 MHz 800 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MINI[Mini-Circuits]
http://
|
| ZHL-1217HLN |
1200 MHz - 1700 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER CASE NN92
|
Mini-Circuits
|
