PART |
Description |
Maker |
RJL6015DPK-15 |
600V - 19A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK5002DPD RJK5002DPD-00J2 RJK5002DPD-15 |
500V - 2.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
APT10050JLC |
POWER MOS VI 1000V 19A 0.500 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
APT5020BN APT5022BN |
POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH SWITCHING P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
2SJ178 2SJ178-T 2SJ178-T/JD 2SJ178-T/JM |
P-channel power MOS FET P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
APT5024BVR |
POWER MOS V 500V 22A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT5028SVR |
POWER MOS V 500V 20A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT5010JVRU2 |
POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|