PART |
Description |
Maker |
GS864218B-167IV GS864218B-167V GS864218B-200IV GS8 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS8662DT19BD-300 GS8662DT19BD-333 GS8662DT19BD-400 |
72Mb SigmaQuad-II TM Burst of 4 SRAM JEDEC-standard pinout and package Dual Double Data Rate interface 72Mb SigmaQuad-II TMBurst of 4 SRAM
|
GSI Technology
|
GS816272CC-333 GS816272CGC-30I GS816272CC-300 GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 4.5 ns, PBGA209 256K x 72 18Mb S/DCD Sync Burst SRAMs 256 × 72 35.7的S /双氰胺同步突发静态存储器 256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 5 ns, PBGA209 256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
|
GSI Technology, Inc.
|
GS864118 GS864132 GS864136 |
72Mb Burst SRAMs
|
GSI Technology
|
GS8640Z18 GS8640Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
GS8642ZV72 |
72Mb NBT SRAMs
|
GSI Technology
|
GS8640V36T-200 GS8640V36T-300 GS8640V36T-300I |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
http://
|
GS8662D08E-250 GS8662D08E-200 GS8662D08GE-167I GS8 |
72Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
GS8662R08E-333 GS8662R08E-333I GS8662R08E-300 GS86 |
72Mb SigmaCIO DDR-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
K7J643682M-FECI30 K7J641882M K7J641882M-FC16 K7J64 |
72Mb M-die DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
GS864018T-XXXV |
(GS8640xxGT-xxxV) 4M x 18/ 2M x 32/ 2M x 36 72Mb Sync Burst SRAMs
|
GSI Technology
|