| PART |
Description |
Maker |
| IRFR130 IRFR130A IRFU130A IRFR130ATF IRFR130ATM IR |
Avalanche Rugged Technology
N-CHANNEL POWER MOSFET
100V N-Channel A-FET
Advanced Power MOSFET 先进的功率MOSFET
(IRFR130A / IRFU130A) Advanced Power MOSFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
175°C Operating Temperature
|
International Rectifier
|
| SFI2955 SFI2955TU |
60V P-Channel A-FET
P-CHANNEL POWER MOSFET
Advanced Power MOSFET
Advanced Power MOSFET
|
Fairchild Semiconductor
|
| IRFW510A IRFI510ATU IRFW510ATM IRFI510A |
N-CHANNEL POWER MOSFET
100V N-Channel A-FET / Substitute of IRFI510
Advanced Power MOSFET 5.6 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
| IRFP9140NPBF IRFP9140NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRF7342QPBF10 IRF7342QTRPBF |
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| IRFL4105PBF IRFL4105TRPBF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
Vishay Siliconix
International Rectifier
|
| SFS9540 |
Advanced Power MOSFET 10.7 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRLM110A IRLM110ATF |
N-CHANNEL MOSFET
HEXFET Power MOSFET
Advanced Power MOSFET
100V N-Channel Logic Level A-FET
|
International Rectifier
FAIRCHILD[Fairchild Semiconductor]
|
| SFS9620 |
Advanced Power MOSFET 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS150A |
TRANSISTOR|MOSFET|N-CHANNEL|100VV(BR)DSS|31AI(D)|TO-247VAR
Advanced Power MOSFET
|
Fairchild Semiconductor
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
