| PART |
Description |
Maker |
| TC59SM816BFT-70 TC59SM808BFT-75 TC59SM808BFTL-75 T |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
| K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification
16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
| MT18LSDT6472AIY-133XX MT18LSDT6472AG-133XX MT18LSD |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 LEAD FREE, DIMM-168
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
Unisonic Technologies Co., Ltd.
|
| M2V64S4DTP-7 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| HY57V12820LT-P |
64M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| HY57V56420AT-H |
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| HYM72V64M636BLF8-H HYM72V64M636BLF8-K HYM72V64M636 |
64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144
SDRAM - SO DIMM 512MB
|
HYNIX SEMICONDUCTOR INC
|
| MC-4564EC726PFB-A80 |
64M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168
|
Elpida Memory, Inc.
|
| M5M4V64S30ATP-10L M5M4V64S30ATP-8A M5M4V64S30ATP-8 |
From old datasheet system
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M4V64S40ATP-8A M5M4V64S40ATP-10 A98009_A M5M4V64 |
From old datasheet system
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2V64S50ETP-I |
64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range)
|
Elpida Memory
|
