PART |
Description |
Maker |
STD36NH02L |
30 A, 24 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
STMICROELECTRONICS
|
SUD50P08-26-E3 |
50 A, 80 V, 0.026 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 ROHS COMPLIANT PACKAGE-3
|
Vishay Intertechnology, Inc.
|
WP-MKT4-173250-S WP-MKT4 WP-MKT4-173225-D WP-MKT4- |
MOSFET DUAL N-CHAN 20V SOT-323 窄带调频甚高频发射模 MOSFET N-CHAN DUAL 200MW SOT-363 MOSFET N-CHAN 50V 350MW SOT-23 MOSFET DUAL N-CHAN 50V SOT-26 FM Narrow Band VHF Transmitter Module
|
Electronic Theatre Controls, Inc. Wireless Products ETC[ETC] List of Unclassifed Manufacturers
|
MUX08EP MUX08FP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
Analog Devices, Inc.
|
NTLTD7900ZR2 |
Power MOSFET 9 Amps, 20 Volts,Logic Level(9A,20V逻辑电平的功率MOSFET) 6 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
AS5SP1M18DQ AS5SP1M18DQ-30ET AS5SP1M18DQ-30IT AS5S |
1M X 18 CACHE SRAM, 3.5 ns, PQFP100 14 X 20 MM, MS-026-D/BHA, TQFP-100 1M X 18 CACHE SRAM, 4 ns, PQFP100 14 X 20 MM, MS-026-D/BHA, TQFP-100 Plastic Encapsulated Microcircuit 18Mb, 1M x 18, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
|
Austin Semiconductor, Inc Micross Components
|
AS5SP128K36DQ-35XT AS5SP128K36DQ-35ET AS5SP128K36D |
128K X 36 CACHE SRAM, 3.5 ns, PQFP100 14 X 20 MM, MS-026-D/BHA, TQFP-100 128K X 36 CACHE SRAM, 4 ns, PQFP100 14 X 20 MM, MS-026-D/BHA, TQFP-100 Plastic Encapsulated Microcircuit 4.5Mb, 128K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
|
Austin Semiconductor, Inc
|
NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143 TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143 TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143 TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143 From old datasheet system
|
NEC Electron Devices
|
FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 8A条一(c TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五(巴西)国际消费电子展|5A一(c)|米:HL080HD5.3 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 75A条一(c
|
Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG
|
IRLU110ATU IRLR110ATF |
Avalanche Rugged Technology $GYDQFHG 3RZHU 026)(7
|
Fairchild Semiconductor
|
MT58LC128K18B4LG-6.8TR |
128K X 18 STANDARD SRAM, 6.8 ns, PQFP100 PLASTIC, MS-026, TQFP-100
|
TE Connectivity, Ltd.
|
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