| PART |
Description |
Maker |
| X28HC256D-12 X28HC256PZ-12 X28HC256PZ-15 X28HC256P |
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 28-SOIC T&R 32K X 8 EEPROM 5V, 90 ns, PDSO28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R 32K X 8 EEPROM 5V, 90 ns, PDSO28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R 32K X 8 EEPROM 5V, 200 ns, PDSO28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 32-PLCC T&R 32K X 8 EEPROM 5V, 90 ns, PQCC32
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-PDIP 32K X 8 EEPROM 5V, 90 ns, PDIP28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC 32K X 8 EEPROM 5V, 90 ns, PQCC32
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 32-PLCC 32K X 8 EEPROM 5V, 90 ns, PQCC32
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC T&R 32K X 8 EEPROM 5V, 90 ns, PQCC32
5V, Byte Alterable EEPROM
|
Intersil, Corp.
Intersil Corporation
|
| HN27C256H HN27C256HFP-10T HN27C256HFP-85T HN27C256 |
256K (32K x 8-bit) UV and OTP EPROM, 70ns
256K (32K x 8-bit) UV and OTP EPROM, 85ns
256K (32K X 8-BIT) UV AND OPT EPROM
|
Hitachi Semiconductor
|
| 28C256TRPFB-15 28C256TRT4FB-15 28C256TRT4FB-12 28C |
256K EEPROM (32K x 8-Bit) EEPROM 32K X 8 EEPROM 5V, 120 ns, DFP28
256K EEPROM (32K x 8-Bit) EEPROM 32K X 8 EEPROM 5V, 150 ns, DFP28
256K EEPROM (32K x 8-Bit) EEPROM 32K X 8 EEPROM 5V, 150 ns, DIP28
256K EEPROM (32K x 8-Bit) EEPROM 32K X 8 EEPROM 5V, 120 ns, DIP28
|
Maxwell Technologies, Inc
|
| UPD43256B00 UPD43256B-XXL UPD43256B-XXLL UPD43256B |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
32K X 8 STANDARD SRAM, 100 ns, PDSO28
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| AT49BV002A AT49BV002AN AT49V002ANT AT49V002AT AT49 |
AT49BV002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 2.7-Volt Read and 2.7-Vold Write. Top or Bottom Boot Parametric Block Flash
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Bottom Boot Parametric Block Flash
|
Atmel
|
| AM29LV002 AM29LV002B-90RECB AM29LV002B-120FCB AM29 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector Flash Memory
Half Bridge Driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位）.0伏的CMOS只，引导扇区闪存
Connector 连接
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
MB 18C 18#20 PIN RECP 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区闪存
256K X 8 FLASH 3V PROM, 90 ns, PDSO40
|
AMD
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| IDT71V256S IDT71V256SA15TP IDT71V256SA15PZI IDT71V |
LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) 32K X 8 CACHE SRAM, 12 ns, PDSO28
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| LH53259 LH53259D LH53259N LH53259T |
CMOS 256K(32K X 8) Mask-Programmable ROM
CMOS 256K (32K x 8) MROM
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| CYD02S36V CYD04S36V CYD09S36V CYD18S36V |
FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步双端口RAM) FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双口RAM（FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双端口RAM）的
|
Cypress Semiconductor Corp.
|
| UPD43256BGX-70L-EKA UPD43256BGX-A10-EKA UPD43256BG |
256K-bit(32K-word x 8-bit) Low power SRAM
|
NEC
|
| TC53257 TC53257F TC53257P |
256K BIT (32K WORD x 8 BIT) CMOS MASK ROM SILICON GATE MOS
|
Toshiba Semiconductor
|
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