| PART |
Description |
Maker |
| HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc.
NXP Semiconductors N.V.
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| MC-4532CC726EF-A80 MC-4532CC726EF-A10 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
ELPIDA MEMORY INC
|
| MSC2313258D-XXDS2 MSC2313258D-XXBS2 MSC2313258D MS |
From old datasheet system
1M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72
1,048,576-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO 1,048,576字32位动态随机存储器模块：快速页面模式型与江
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
Oki Electric Industry Co., Ltd.
|
| AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation
ALSC
|
| HYMD212G726DF4-D43 HYMD212G726DF4-D43J HYMD212G726 |
184pin Registered DDR SDRAM DIMMs
32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184
32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
http://
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MSC23V47257TA-XXBS18 MSC23V47257SA-XXBS18 MSC23V47 |
4,194,304-Word ′ 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
4194304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
4,194,304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
4,194,304-Word ? 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
4,194,304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4194304词?72位DRAM模块：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY |
1M x 4 Bit EDO DRAM 3.3 V 50 ns
1M x 4 Bit EDO DRAM 3.3 V 60 ns
-1M x 4-Bit Dynamic RAM
1M x 4 Bit EDO DRAM 3.3 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IBM13N32644JCA-260T IBM13N32734JCA-260T IBM13N3264 |
x64 SDRAM Module
32M x 64 Two-Bank Unbuffered SDRAM Module(32M x 64 2组不带缓的冲同步动态RAM模块)
x72 SDRAM Module x72内存模块
32M x 72 Two-Bank Unbuffered SDRAM Module(32M x 72 2组不带缓冲的同步动态RAM模块) 32M × 72配置双行缓冲内存模组2M × 72配置2组不带缓冲的同步动态内存模块）
|
IBM Microeletronics
DB Lectro, Inc.
International Business Machines, Corp.
|
| DPED8MX32RKY5-50C DP3D8MX32RKY5-70C DP3ED8MX32RKY5 |
8M X 32 EDO DRAM MODULE, 50 ns, QMA66
8M X 32 FAST PAGE DRAM MODULE, 70 ns, QMA66 LEADLESS, STACK, TSOP-66
8M X 32 EDO DRAM MODULE, 70 ns, QMA66 LEADLESS, STACK, TSOP-66
8M X 32 FAST PAGE DRAM MODULE, 50 ns, QMA66
8M X 32 EDO DRAM MODULE, 60 ns, QMA66 LEADLESS, STACK, TSOP-66
|
Alliance Semiconductor, Corp.
Twilight Technology, Inc.
|
