| PART |
Description |
Maker |
| RF3933 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1000 |
15W GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1021U |
60W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| MAPG-S22729-350L00 MAPG-002729-350L00 |
S-Band 350 W Radar Pulsed Power GaN Pallet
|
M/A-COM Technology Solu...
|
| DDW-JJD-N1 DDB-JJS-K1 DDB-JJS-K2 DDB-JJS-KL2-1-I1 |
LED GaN SINGLE COLOR LED, BLUE
LED GaN 氮化镓发光二极管
LED GaN SINGLE COLOR LED, WHITE
|
DOMINANT Opto Technologies Sdn. Bhd.
DOMINANT Opto Technologies Sdn Bhd.
DOMINANT[DOMINANT Semiconductors]
|
| UPD30100GC-40-9EU |
Transmitter; Package: PG-TSSOP-16; Frequency Band: 434.0 MHz 868.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 10.0 dBm; Temperature Range: -40.0 - 125.0 °C 64位微处理
|
Ecliptek, Corp.
|
| FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| CM4208A2 |
SCR/Diode POW-R-BLOK Modules 25 Amperes/800 Volts
SCR/Diode POW-R-BLOK⑩ Modules 25 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| CD510825 |
Dual Diode POW-R-BLOK⑩ Modules 250 Amperes/800 Volts
Dual Diode POW-R-BLOK Modules 250 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM4316A2 CM4312A2 |
Dual SCR POW-R-BLOK Modules 25 Amperes/1200-1600 Volts
Dual SCR POW-R-BLOK⑩ Modules 25 Amperes/1200-1600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
