| PART |
Description |
Maker |
| MTP29N15E |
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
|
| FP00013K30F6201B8 FP0004 FP00021K30F9251B8 FP00022 |
VISFP00013K30F6201B8 FP1 :6201 3.3K 1% B
Metal Film Resistors, Industrial, Flameproof
Film/Foil Resistor, RESISTOR, METAL FILM, 2 W, 1 %, 150 ppm, 1300 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
Film/Foil Resistor, RESISTOR, METAL FILM, 2 W, 1 %, 150 ppm, 20000 ohm, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS COMPLIANT
VISFP000233R0F9251EK A2V00001421814 RES
Film/Foil Resistor, RESISTOR, METAL FILM, 2 W, 1 %, 150 ppm, 2000 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
Res Metal Film 230K Ohm 1% 1W ±150ppm/C Conformal AXL Thru-Hole T/R
Film/Foil Resistor, RESISTOR, METAL FILM, 1 W, 1 %, 150 ppm, 150000 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
Film/Foil Resistor, RESISTOR, METAL FILM, 3 W, 1 %, 150 ppm, 100000 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
|
Vishay Dale
Vishay Siliconix
|
| HUFA75823D3S HUFA75823D3 HUFA75823D3ST |
14A, 150V, 0.150 Ohm, N-Channel, UltraFETPower MOSFET
14A 150V 0.150 Ohm N-Channel UltraFET Power MOSFET
14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| RFD15P05 RFD15P05SM RFP15P05 FN2387 |
15A/ 50V/ 0.150 Ohm/ P-Channel Power MOSFETs
15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| IRFU211 |
2.7 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| IRFB23N15D |
23 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
|
| IRFB23N15DPBF |
23 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
|
| 2SK740-E |
10 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
|
| IRFP9150 FN2293 |
25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
25A, 100V, 0.150 Ohm, P-Channel Power MOSFET
From old datasheet system
|
HARRIS SEMICONDUCTOR
Intersil Corporation
Samsung semiconductor
|
| IRF9150 |
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
|
New Jersey Semi-Conductor P...
|
| IRFP3415 |
43 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
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