PART |
Description |
Maker |
MCM64PC32 MCM64PC64SG66 |
256K/512K Pipelined BurstRAM Secondary Cache Module for Pentium 64K X 64 CACHE TAG SRAM MODULE, 8 ns, DMA160
|
Motorola, Inc. Motorola Mobility Holdings, Inc.
|
MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM |
512K X 18 CACHE SRAM, 3 ns, PBGA119 512K X 18 CACHE SRAM, 2.6 ns, PBGA119 256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
FREESCALE SEMICONDUCTOR INC Motorola, Inc
|
GS816018 GS816032 GS816032T-133IT GS816032T-250IT |
512K X 36 CACHE SRAM, 7.5 ns, PQFP100 512K X 32 CACHE SRAM, 5.5 ns, PQFP100 512K X 32 CACHE SRAM, 8.5 ns, PQFP100 18Mb Burst SRAMs 512K X 36 CACHE SRAM, 7 ns, PQFP100
|
GSI Technology
|
CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics. 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位(为512k × 36 / 1兆位× 18)流水线双氰胺同步静态存储器
|
Cypress Semiconductor Corp.
|
AS7M64P512-15C AS7M64P512-20C |
512K X 8 CACHE SRAM MODULE, 15 ns, XMA160 512K X 8 CACHE SRAM MODULE, 20 ns, XMA160
|
Alliance Semiconductor, Corp.
|
IS61SF51218T-8.5TQI IS61SF51218D-8B |
512K X 18 CACHE SRAM, 8.5 ns, PQFP100 512K X 18 CACHE SRAM, 8 ns, PBGA119
|
INTEGRATED SILICON SOLUTION INC
|
CY7C1387B-133BGC CY7C1387B-133AC CY7C1387B-133BZC |
512K x 36/1M x 18 Pipelined DCD SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined DCD SRAM 512K X 36 CACHE SRAM, 3.8 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IS61LF51218J-7.5B IS61LF51218J-7.5BI IS61LF25636J- |
512K X 18 CACHE SRAM, 7.5 ns, PBGA119 PLASTIC, BGA-119 256K X 36 CACHE SRAM, 7.5 ns, PBGA119 256K X 32 CACHE SRAM, 6.5 ns, PQFP100
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|
CY7C1367C-166BGC CY7C1366C-200BZI CY7C1366C-200BZC |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PBGA119 Low Cost, Single, 300 MHz Voltage Feedback Amplifier; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 256K X 36 CACHE SRAM, 3 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA165
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
GS88118AT-166I GS88118AT-225I GS88118AD-150I GS881 |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 7 ns, PQFP100 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 6 ns, PQFP100 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 7.5 ns, PBGA165 256K X 32 CACHE SRAM, 7 ns, PBGA165
|
GSI Technology, Inc.
|
GS88218BB-333 GS88218BB-3005I GS88218BB-200 GS8823 |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 5 ns, PBGA119
|
http:// GSI Technology, Inc. Electronic Theatre Controls, Inc.
|
IDT71V67903S80BGI IDT71V67903S75BG IDT71V67903S75B |
3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA119 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119
|
IDT Integrated Device Technology, Inc.
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