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VB20120SG-E3-8W - High-Voltage Trench MOS Barrier Schottky Rectifier 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB

VB20120SG-E3-8W_4102069.PDF Datasheet
 
Part No. VB20120SG-E3-8W VB20120SG-E3-4W VF20120SG-E3-4W VI20120SG-E3-4W VF20120SG-E3/4W V20120SG09
Description High-Voltage Trench MOS Barrier Schottky Rectifier
20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB
File Size 156.83K  /  5 Page  

Maker

Vishay Siliconix
VISHAY SEMICONDUCTORS

Homepage http://www.vishay.com
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 Full text search : High-Voltage Trench MOS Barrier Schottky Rectifier 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB
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