| PART |
Description |
Maker |
| 2N6576 |
15 AMPERE NPN DARLINGTON POWER TRAN
|
General Semiconductor
|
| 40TR12B |
SENSOR / ULTRASONIC / 40KHZ / TRAN
|
Jameco
|
| MCRF355 MCRF360 |
The MCRF355 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features optimized at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran
The MCRF360 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features operating at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran
|
Microchip
|
| MJW0281A MJW0281A05 MJW0302A MJW0281ADATASHEET MJW |
Complementary NPN?PNP Power Bipolar Transistors
; Package: SOIC NARROW; No of Pins: 14; Qty per Container: 55/Rail 15 A, 260 V, PNP, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Power Bipolar Transistors
Complementary Power Transistors
|
ON Semiconductor
http://
|
| 2SB1371 |
Silicon PNP triple diffusion planar type(For high power amplification) 6 A, 120 V, PNP, Si, POWER TRANSISTOR
|
TE Connectivity, Ltd.
PANASONIC[Panasonic Semiconductor]
|
| MJL4302A MJL4281A |
Complementary NPN-PNP Silicon Power Bipolar Transistors 15 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-264AA
From old datasheet system
POWER TRANSISTOR, NPN
350V Audio Transistor, PNP
350V Audio Transistor, NPN
|
ON Semiconductor
ONSEMI
|
| 2N4399 |
PNP Silicon High-Power Transistor(60V（集电极-发射极）硅PNP大功率晶体管) 30 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| MJL21193 MJL21193-D MJL21194 |
Power 16A 250V NPN
Silicon Power Transistors
From old datasheet system
TRANSISTOR,BJT,PNP,250V V(BR)CEO,160A I(C),TO-264
Power 16A 250V PNP
|
ON Semiconductor
|
| SFT503/GR SFT501/G SFT501/GR |
5 AMP 200 VOLTS PNP HIGH SPEED POWER TRANSISTOR 5 A, 150 V, PNP, Si, POWER TRANSISTOR
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
