PART |
Description |
Maker |
NS8DT NS8BT NS8MT NS8AT NS8GT NS8JT NS8KT |
Glass Passivated General Purpose
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EIC[EIC discrete Semiconductors]
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1.5KE350 1.5KE7.5 1.5KE100 1.5KE400 1N6300 15KE 1. |
160 V, 1500 W, glass passivated junction transient voltage suppressor GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 玻璃钝化结瞬态电压抑制器 16-Bit Dual-Supply Bus Transceiver with Configurable Voltage Translation and 3-State Outputs 48-TSSOP -40 to 85 220 V, 1 mA, glass passivated junction transient voltage suppressor GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
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TRANSYS Electronics Limited Transys Electronics, Ltd. Transys Electronics Ltd. TRSYS http:// List of Unclassifed Manufacturers List of Unclassifed Manufac... List of Unclassifed Man...
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1N4007G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER, Reverse Voltage - 50 to 1300 Volts, Forward Current - 1.0Amperes TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER
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Chenyi Electronics http://
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1N3611 |
GLASS PASSIVATED GENERAL PURPOSE SILICON RECTIFIERS 1.0 AMP, 200 THRU 1000 VOLTS
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Central Semiconductor Corp
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AB80-C1500RG AB380-C1500RG AB250-C1500RG AB40-C150 |
200 V, 1.5 A Avalanche glass passivated bridge rectifier 900 V, 1.5 A Avalanche glass passivated bridge rectifier 600 V, 1.5 A Avalanche glass passivated bridge rectifier 100 V, 1.5 A Avalanche glass passivated bridge rectifier
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EIC discrete Semiconductors
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CN646TR CN647TR CN646 CN649 CN647 CN648 CN645 |
GLASS PASSIVATED JUNCTION GENERAL PURPOSE DIODE 0.4 A, SILICON, SIGNAL DIODE, DO-41
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Central Semiconductor C... CENTRAL SEMICONDUCTOR CORP
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GS1J-T1 GS1J-T3 GS1A GS1M-T3 GS1A-T1 GS1A-T3 GS1B- |
CHOKE RF CONFORMAL COATED 0.68UH 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 安培表面贴装玻璃钝化整流 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
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WTE[Won-Top Electronics] Won-Top Electronics Co., Ltd. WON-TOP ELECTRONICS CO LTD
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1R5GU41 |
Ultra Fast Recovery Pack: DO-15 ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞400V CURRENT拢潞1.5A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?00V CURRENT?.5A
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Gulf Semiconductor
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1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN Diodes Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
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Vishay Beyschlag
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30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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MDE Semiconductor
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