| PART |
Description |
Maker |
| SLA4041 |
3 A, 200 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Darlington With built-in flywheel diode
|
Sanken electric
|
| TD62506F TD62502F |
200 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
|
| BC847PN-B |
200 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
SIEMENS AG
Infineon Technologies AG
|
| MBT3904DW1T1 MBT3904DW2T1G MBT3904DW1T1G MBT3904DW |
Dual General Purpose Transistors 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
ONSEMI[ON Semiconductor]
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| DMMT3904W-7-F |
MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Inc.
Diodes, Inc.
|
| 2N3904BUNL 2N3904RM |
NPN General Purpose Amplifier 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| 2N3013 2N3014 2N3009 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| IRF9510 FN2214 |
From old datasheet system
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET
3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
|
Intersil Corporation
|
| IXFT74N20 IXFR90N20 IXFE24N100 |
HIPERFET POWER MOSFETs 74 A, 200 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET ISOPLUS247, 3 PIN
Single MOSFET Die 22 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| 2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE.
NPN SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
|
