| PART |
Description |
Maker |
| 1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC
OPTEK Technologies
|
| LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| SIR-563ST3F07 |
Infrared light emitting diode, top view type
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Rohm
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| BIR-BO731 BIR-NL7C1 BIR-BM734 BIR-BL734 |
3 mm, 1 ELEMENT, INFRARED LED, 840 nm
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
American Bright Optoelectronics, Corp.
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| 3611LR015K |
1 ELEMENT, 0.015 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
|
| BIR-BO13E4G-2 BIR-BO13V4V-2 BIR-BN03V4V-2 BIR-BO03 |
5 mm, 1 ELEMENT, INFRARED LED, 850 nm
4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm
4.98 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp.
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| BMC0805HF-R27K BMC BMC0402HF-10NK BMC0402HF-12NK B |
1 ELEMENT, 0.18 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.001 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Multilayer High Frequency Ceramic Chip Inductors 0402 - 0805 Industry Sizes
1 ELEMENT, 0.1 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.015 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
BITECH[Bi technologies]
BI Technologies Corporation
|
| CMPD6263ATRLEADFREE CMPD6263STRLEADFREE CMPD6263CT |
0.015 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
0.015 A, 70 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
|
