PART |
Description |
Maker |
ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 8A条一(c)| TO - 220AB现有
|
Continental Device India, Ltd.
|
HDM160GS16 |
160 X 160 Dots Graphic, Low Power w/Touch Screen
|
HANTRONIX[Hantronix,Inc]
|
IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 48A条一(c)|47SMD
|
IXYS, Corp.
|
STI270N4F3 STB270N4F3 STB270N4F308 STP270N4F3 |
N-channel 40 V - 2.1 mΩ - 160 A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET N-channel 40 V - 2.1 mヘ - 160 A - TO-220 - D2PAK - I2PAK STripFET⑩ Power MOSFET
|
STMicroelectronics
|
IRGC14C40LD IRGC14C40LC IRGC14C40LB IRGC14C40LBPBF |
TRANSISTOR | IGBT | N-CHAN | 430V V(BR)CES | CHIP 14 A, 370 V, N-CHANNEL IGBT
|
|
KS0794 |
160 COM / 160 SEG DRIVER FOR STN LCD
|
Samsung semiconductor
|
ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|甲一(c)|63AB
|
Hynix Semiconductor, Inc.
|
NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143 TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143 TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143 TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143 From old datasheet system
|
NEC Electron Devices
|
STV160NF02LA |
160 A, 20 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET
|
STMICROELECTRONICS
|
HGT1S2N120BNS9A HGTD2N120BNS HGT1S2N120BNS HGTP2N1 |
12A, 1200V, NPT Series N-Channel IGBT TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB
|
Fairchild Semiconductor
|
|