| PART |
Description |
Maker |
| CGH21240F CGH21240F-TB |
S BAND, GaN, N-CHANNEL, RF POWER, HEMFET ROHS COMPLIANT, CERAMIC PACKAGE-2
|
Cree, Inc.
|
| P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的，单台BLOk反应腔二极管隔离模块（二五?安高达2400伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| RFHA1023A |
250W GaN WIDE-BAND PULSED
|
RF Micro Devices
|
| RFHA3944 |
65W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| ECE-V1HA101UP RF3933TR7 EEV-TG2A101M ERJ-8GEYJ100V |
90W GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| MAMG-001214-090PSM-V2 |
L-Band 90 W 2-Stage Fully Matched GaN Module
|
M/A-COM Technology Solution...
|
| CGHV14800F-AMP CGHV14800-TB |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| NE72118-T2 NE72118 NE72118-T1 |
C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET
|
NEC[NEC]
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
