PART |
Description |
Maker |
APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS 7 R MOSFET
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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APT50M75JFLL |
POWER MOS 7 500V 52A 0.075 Ohm
|
Advanced Power Technology
|
BUK7575-55 BUK7575-55_2 BUK7575-55127 |
19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system TrenchMOS TM transistor Standard level FET
|
NXP SEMICONDUCTORS Philips
|
MUX08 MUX08BRC_883 MUX08S MUX-08 MUX-08AQ MUX-08BQ |
JFET SWITCH RATHER THAN CMOS 8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16 8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16 ID ISC.LRMU1000-A-FCC UHF READER Tools, Tips Soldering; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes 8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) 8-Channel Analog Multiplexer 4-Channel Analog Multiplexer 8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected)
|
ANALOG DEVICES INC Analog Devices, Inc. AD[Analog Devices]
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APT60M75PVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 600V 60.5A 0.075 Ohm
|
Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
|
APT50M75JLL |
POWER MOS 7 500V 52A 0.075 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC Analog IC 模拟IC
|
Bourns, Inc.
|
AS8S128K32Q1-35_883C AS8S128K32Q1-35_IT AS8S128K32 |
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66 128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 0.140 INCH HEIGHT, CERAMIC, QFP-68
|
http:// Austin Semiconductor, Inc
|
ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247 TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 16A条一(c)| TO - 220AB现有
|
Microsemi, Corp.
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