| PART |
Description |
Maker |
| GS8160Z18CGT-250I GS8160Z18CGT-333 GS8160Z18CT GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8162Z18BB-200V |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI Technology
|
| GS8162Z72C-200I GS8162Z72C GS8162Z72C-133 GS8162Z7 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8160Z18 GS8160Z36T GS8160Z36T-133 GS8160Z36T-150 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
ETC
|
| GS8161Z36BD-150 GS8161Z18BD-200 GS8161Z36BD-200 GS |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
| GS8162Z72CC-250 GS8162Z72CC-150 GS8162Z72CC-150I G |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 5.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 7.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 6.5 ns, PBGA209
|
GSI Technology, Inc.
|
| GS8162Z72CC-150V GS8162Z72CC-150IV GS8162Z72CGC-20 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 7.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 6.5 ns, PBGA209
|
GSI Technology, Inc.
|
| IDT71P79804 IDTIDT71P79104250BQI IDTIDT71P79104267 |
18Mb Pipelined DDR垄芒II SIO SRAM Burst of 2
18Mb Pipelined DDR?II SIO SRAM Burst of 2
|
Integrated Device Technology
|
| IDT71P74804 IDT71P74804S167BQ IDT71P74804S200BQ ID |
18Mb Pipelined QDR II SRAM Burst of 4
|
Integrated Device Technology
|
| IDTIDT71P79204167BQ IDTIDT71P79204250BQ IDTIDT71P7 |
18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 35.7流水线⑩二二氧化硅的DDR SRAM的爆
|
Integrated Device Technology, Inc.
|
| IS61LF102418A-6.5B2 IS61LF102418A-6.5B2I IS61LF102 |
256K X 72, 512K X 36, 1024K X 18 18MB SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
