| PART |
Description |
Maker |
| STP3NA100 STP3NA100FP |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN 老产品：不适合用于新设计中
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
ST Microelectronics
|
| MMJT9410T1 MMJT9410-D |
NPN Bipolar Power Transistor
Bipolar Power Transistors NPN Silicon
|
ON Semiconductor
|
| 2SD1468S 2SD1834 2SD1834T100W 2SD1468STPR 2SD1468S |
1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
BJT
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体
|
ROHM
|
| ACE1501EMT ACE1501EMT8 ACE1501EMT8X ACE1501EMTX AC |
ACE1501 Product Family Arithmetic Controller Engine (ACEx for Low Power Applications ACE1501产品系列运算控制器引擎（ACEx⑩）的低功耗应
ACE1501 Product Family Arithmetic Controller Engine (ACEx? for Low Power Applications
ACE1501 Product Family Arithmetic Controller Engine (ACEx?? for Low Power Applications
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| BCR10CM-12LB BCR10CM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
| BCR16CS-12LB BCR16CS-12LB-T11 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150掳C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
| STE07DE220 E07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module
|
ST Microelectronics
STMicroelectronics
|
| STE70IE120 |
Monolithic Emitter Switched Bipolar Transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT 1200V 70A 0.014Ohm Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| F02B250V112A F02B250V114A F02B250V14A F02B250V12A |
Military Qualified Product Listing
Military Qualified Product Listing MIL-F-15160 Fuses - Instruments, Power and Telephone
Military Qualified Product Listing
Military Qualified Product Listing MIL-F-15160 Fuses - Instruments, Power and Telephone
|
Cooper Bussmann, Inc.
|
| SMDJ100A SMDJ110A SMDJ130A SMDJ120A SMDJ150 SMDJ17 |
100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
110.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
150.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
