PART |
Description |
Maker |
PDTD113E PDTD113EK PDTD113ES PDTD113ET PDTD113E-15 |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
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NXP Semiconductors
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PDTD123E PDTD123EK PDTD123ES PDTD123ET PDTD123E-15 |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k楼?, R2 = 2.2 k楼? NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
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NXP Semiconductors
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PIMC31 |
500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
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NXP Semiconductors
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PDTB113ZT215 PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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NXP Semiconductors N.V.
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PIMC31 |
500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
|
NXP Semiconductors
|
PUMH13115 PEMH13-PUMH13-15 |
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. NPN/NPN resistor-equipped transistors R1 = 4.7 k? R2 = 47 k?
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NXP Semiconductors
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PEMH13 PUMH13 |
NPN/NPN resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ NPN-NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管,R1=4.7千欧姆,R2=47千欧
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NXP Semiconductors N.V.
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PDTC143Z PDTC143ZE PDTC143ZEF PDTC143ZM PDTC143ZS |
NPN resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN resistor-equipped transistors; R1 = 4.7 kW R2 = 47 kW NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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EMG2DXV5T5 EMG2DXV5T1 EMG2DXV5T1G EMG2DXV5T5G EMG5 |
Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
ONSEMI[ON Semiconductor]
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BC817-16W Q62702-C2320 Q62702-C2323 Q62702-C2324 Q |
RES FIX, 324 OHM.125W 1% SMDA 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN Silicon AF Transistor (For general AF applications High collector current High current gain) 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR From old datasheet system
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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PDTC114YEF PDTC114YT |
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm NPN配电阻型晶体R1=10千欧姆,R2=47千欧 NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ NPN resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
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NXP Semiconductors N.V.
|
PDTB123EU |
500 mA, 50 V PNP resistor-equipped transistors
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NXP Semiconductors
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