| PART |
Description |
Maker |
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB25D128800T-7 HYB25D128800T-7.5 HYB25D128800TL-6 |
128Mb (16Mx8) DDR 266A (2-3-3)
128Mb (16Mx8) DDR 266B (2.5-3-3)
16M X 8 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
|
Infineon Technologies AG
|
| HY5DU561622DTP-5 |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| WED3EL7216S7BC |
16M X 72 DDR DRAM, 0.75 ns, PBGA219
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
| NT5DS16M16BS-6KL |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
NANYA TECHNOLOGY CORP
|
| EDE2516AASE-4A-E EDE2516AASE-5C-E |
16M X 16 DDR DRAM, 0.6 ns, PBGA84
16M X 16 DDR DRAM, 0.5 ns, PBGA84
|
ELPIDA MEMORY INC
|
| MT8VDDT1664HDG-335XX |
16M X 64 DDR DRAM MODULE, 0.75 ns, ZMA200
|
|
| MT8VDDT1664AG-202A1 |
16M X 64 DDR DRAM MODULE, 0.8 ns, DMA184
|
|
| W9412FADA-75 |
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
WINBOND ELECTRONICS CORP
|
| HY5DS113222FM HY5DS113222FM-4 HY5DS113222FMP-4 HY5 |
512M(16Mx32) GDDR SDRAM 16M X 32 DDR DRAM, 0.6 ns, PBGA144
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
