| PART |
Description |
Maker |
| HY5PS1G1631CLFP-Y5I HY5PS1G431CLFP-Y5I HY5PS1G1631 |
64M X 16 DDR DRAM, PBGA84
256M X 4 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
0603 18 OHM 1/16W
RESISTOR, 1K, 1%, SMT 0603
1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| NT5CB256M4CN-AC NT5CB256M4CN-BE |
256M X 4 DDR DRAM, PBGA78
|
NANYA TECHNOLOGY CORP
|
| M393B5673GB0-CF8 |
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
| W3EG2128M64ETSR335JD3MG |
256M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
| HYS64T256020EDL-2.5C4 |
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200
|
QIMONDA AG
|
| HMT351R7BFR8A-H9 |
256M X 72 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
| HY5PS2G831CMP-S5 HY5PS2G831CMP-C4 HY5PS2G831CMP-S6 |
256M X 8 DDR DRAM, 0.4 ns, PBGA63 ROHS COMPLIANT, FBGA-63
256M X 8 DDR DRAM, 0.5 ns, PBGA63 ROHS COMPLIANT, FBGA-63
|
Hynix Semiconductor, Inc.
|
| HYMP125S64CP6-S5 HYMP125S64CP6-S6 HYMP125S64CP6-Y5 |
256M X 64 DDR DRAM MODULE, 0.4 ns, DMA200 ROHS COMPLIANT, SODIMM-200
256M X 64 DDR DRAM MODULE, 0.45 ns, DMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HMT125S6AFP6C-S5 HMT125S6AFP6C-S6 |
256M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
|
|
