| PART |
Description |
Maker |
| PBRN113Z PBRN113ZK PBRN113ZS PBRN113ZT |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 1 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 1 k搂?, R2 = 10 k搂?
|
NXP Semiconductors
|
| PBRN123E |
NPN 800 mA 40 V BISS RETs
|
NXP Semiconductors
|
| PBSS301ND |
20 V, 4 A NPN low VCesat (BISS) transistor 20伏，4安NPN型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS304NX |
60 V, 4.7 A NPN low VCEsat (BISS) transistor 60伏，4.7安NPN型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS4520X PBSS4520X-15 |
20 V, 5 A NPN low VCEsat (BISS) transistor 20伏，5安NPN型低饱和压降（BISS）晶体管
NPN low VCEsat (BISS) transistor 20 V, 5 A
|
NXP Semiconductors N.V.
|
| PBSS4041SPN |
60 V NPN/PNP low V_CEsat (BISS) transistor
60 V NPN/PNP low VCEsat (BISS) transistor
60 V NPN-PNP low V_CEsat (BISS) transistor 6700 mA, 60 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBRP113ET |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW
|
NXP Semiconductors
|
| PBSS4160PAN PBSS4160PAN-15 |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS5130T |
30 V; 1 A PNP low VCEsat (BISS) transistor 30伏，1PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS5350D |
50 V, 3 A PNP low VCEsat (BISS) transistor 50伏，3安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PMMT491 PMMT491A |
NPN BISS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PBSS5160U PBSS5160U115 |
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT323 (SC-70); Container: Tape reel smd 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
