| PART |
Description |
Maker |
| PBRN123E PBRN123EK PBRN123ES PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 2.2 k?
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k??
|
NXP Semiconductors
|
| PBSS304NX |
60 V, 4.7 A NPN low VCEsat (BISS) transistor 60伏，4.7安NPN型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS303NZ |
30 V, 5.5 A NPN low VCEsat (BISS) transistor 30伏，5.5安NPN型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS2540M PBSS2540M315 |
40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| PBRP123ET |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW
|
NXP Semiconductors
|
| MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
|
| PBSS4160DS |
60 V 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
Philips Semiconductors
|
| PBSS4160PANP |
NPN/NPN low VCEsat (BISS) transistor
|
NXP
|
| PBSS4160PAN |
NPN/NPN low VCEsat (BISS) transistor
|
NXP
|
| PBSS303PX |
30 V, 5.1 A PNP low VCEsat (BISS) transistor 30伏，6安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS4021NZ |
20 V, 8 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS302NX |
20 V, 5.3 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
