| PART |
Description |
Maker |
| SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储
RESISTOR 62 OHM .5W CARB COMP
4 Mbit (512K x8) SuperFlash EEPROM 4兆位（为512k × 8）超快闪EEPROM
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
(SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| AS8S512K32AQ1-25L_Q AS8S512K32P-17L/IT AS8S512K32P |
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 PGA-66
512K x 32 SRAM SRAM MEMORY ARRAY
|
Micross Components
Austin Semiconductor
|
| AS8S512K32AP-45/IT AS8S512K32Q-45LIT AS8S512K32P-4 |
512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PGA66
512K x 32 SRAM memory array
|
AUSTIN SEMICONDUCTOR INC
|
| DS1350YL-70-IND DS1350YL-70IND DS1350YL-100IND |
512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 LOW PROFILE, SMT-34
512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DFP34
512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DFP34
512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDSO34 LOW PROFILE, SMT-34
|
Maxim Integrated Products, Inc.
|
| DPZ512X16II3-20C DPZ512X16IY3-20C DPZ512X16IH3-20C |
512K X 16 FLASH 12V PROM MODULE, 200 ns, QIP48 HERMETIC SEALED, CERAMIC, STRAIGHT, MODULE, SLCC-48
512K X 16 FLASH 12V PROM MODULE, 200 ns, CQCC48 HERMETIC SEALED, CERAMIC, LEADLESS, MODULE, SLCC-48
512K X 16 FLASH 12V PROM MODULE, 200 ns, QFP48 HERMETIC SEALED, CERAMIC, GULLWING, MODULE, SLCC-48
512K X 16 FLASH 12V PROM MODULE, 200 ns, PGA50 HERMETIC SEALED, CERAMIC, MODULE, SLCC, PGA-50
|
Twilight Technology, Inc.
|
| CAT28C16AKI-20 CAT25C03U-1.8 CAT25040YI-GT3 CAT24W |
EEPROM (256x8) 2K 1.8-6.0
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
EEPROM (4kx8) 32K 1.8-6.0
EEPROM (2048x8) 16K
EEPROM (256x8) 2K 2.5-6.0
EEPROM 64K X 8 512K 5V
EEPROM (256x8) (128x16) 2K
EEPROM (8kx8) 64K 3V
EEPROM (512x8) (256x16) 4K
EEPROM (2048x8)(1024x16)16K
EEPROM (128x8) 1k 1.8-6.0
EEPROM (8kx8) 64K 1.8-6.0
EEPROM 16K-Bit CMOS PARA EEPROM
EEPROM (512x8) 4k 2.5-6.0
EEPROM (4096x8) 32k 1.8-6.0
EEPROM (384x8) 128k 16
EEPROM (2Kx8) 16K 5V 90ns
|
Electronic Theatre Controls, Inc.
ON Semiconductor
Qualtek Electronics, Corp.
Lumex, Inc.
Vicor, Corp.
EPCOS AG
NXP Semiconductors N.V.
Atmel, Corp.
Linear Technology, Corp.
Amphenol, Corp.
Bourns, Inc.
TE Connectivity, Ltd.
Integrated Silicon Solution, Inc.
Anpec Electronics, Corp.
|
| R1EX24512BSAS0G R1EX24512BSAS0G-15 R1EX24512BTAS0G |
Two-wire serial interface 512k EEPROM
Two-wire serial interface 512k EEPROM (64-kword ?8-bit)
|
Renesas Electronics Corporation
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| AS8F512K32Q1-150_883C AS8F512K32Q1-150_CT AS8F512K |
512K X 32 FLASH 5V PROM MODULE, 90 ns, CPGA66
512K x 32 FLASH FLASH MEMORY ARRAY
|
AUSTIN SEMICONDUCTOR INC
|
|
