| PART |
Description |
Maker |
| 4-125A 4-125A/4D21 |
VHF POWER TETRODE
|
List of Unclassifed Manufacturers
|
| 4CX250B-M |
RADIAL BEAM POWER TETRODE
|
Communications & Power Industries, Inc.
|
| SV6L6GC |
High Performance Audio Beam Power Tetrode
|
Svetlana
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BF1012S |
Silicon N-Channel MOSFET Tetrode
|
Infineon
|
| BF1005S07 |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| BF2030R BF2030W BF2030 |
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| QQE40 |
DOUBLE TETRODE FOR USE AS H.F. AMPLIFIER AND OSCILLATOR
|
NXP Semiconductors
|
| CF300 |
N- Channel-GaAs-MESFET-Tetrode Depletion Mode
|
List of Unclassifed Manufacturers
ETC
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
New Jersey Semi-Conduct...
|
| BF98808 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Intertechnology,Inc.
|
