| PART |
Description |
Maker |
| STW6NC90Z |
5.2 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
STMICROELECTRONICS
|
| J174 J176 J177 J175 |
P-channel silicon field-effect transistors
RESISTOR SILICONE 900 OHM 5W
|
Philips Semiconductors / NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| STY16NA90 |
N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET
|
ST Microelectronics
|
| 2SK261009 2SK2610 |
5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Chopper Regulator, DC−DC Converter and Motor Drive Applications
|
Toshiba Semiconductor
|
| FQP2N90 |
900V N-Channel MOSFET 2.2 A, 900 V, 7.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXFX52N30Q IXFX16N90Q |
52 A, 300 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 900 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS CORP
|
| 2SK2487 2SK2487-A |
8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| IXFH16N90 |
HiPerFET Power MOSFETs 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS, Corp.
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| IXFB52N90P |
Polar Power MOSFET HiPerFET
52 A, 900 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS Corporation
|
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
|
