| PART |
Description |
Maker |
| UPD65626 UPD65632 UPD65654 UPD65650 UPD65651 UPD65 |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS CMOS-6/6A/6V/6X 1.0微米CMOS门阵
|
http://
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| COMS-6X COMS-6A COMS-6V |
CMOS GATE ARRAYS
|
NEC Corp.
|
| UPD65040 UPD65011 UPD65021 |
(UPD65000 Series) CMOS Gate Arrays
|
NEC Electronics
|
| CLA80000 |
High Density CMOS Gate Arrays
|
Zarlink Semiconductor
|
| CLA90000 |
High Density CMOS Gate Arrays
|
Zarlink Semiconductor
|
| UPD65003 UPD65010 UPD65020 |
(UPD65000 Series) 3-Micron CMOS Gate Arrays
|
NEC Electronics
|
| ATL60 |
The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools.
|
Atmel
|
| XC4000XLA-SERIES XC4000XV-SERIES XC40110XV-08HQ240 |
Field Programmable Gate Arrays
Field programmable gate arrays. VCCINT = 2.3V to 2.7V and VCCIO = 3.3 to 3.6V .
Field programmable gate arrays. Vcc = 3.0V to 3.6V.
|
Xilinx
|
| 256 600 120 ATL25_432 ATL25 ATL25_976 ATL25_100 AT |
ASIC 专用集成电路
From old datasheet system
The ATL25 series gate array and embedded array families from Atmel are fabricated on a 0.25 micron CMOS process with 5 levels of metal. This family features arrays with up to 6.9 million routable gates and 976 pins. The high density and hi
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| UPD65321 UPD65322 UPD65323 UPD65941GB-XXX-YEU UPD6 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD)
Channelless type CMOS gate array using 0.35um process
|
NEC
|
| OR3C80 |
(OR3xxx) 3C and 3T Field-Programmable Gate Arrays
|
Lattice Semiconductor
|
| XCV600E-6HQ240C XCV600E-6HQ240I |
Virtex-E 1.8 V Field Programmable Gate Arrays
|
Xilinx, Inc
|
