| PART |
Description |
Maker |
| W641GG2JB |
1-Gbit GDDR3 Graphics SDRAM
|
Winbond
|
| K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J5 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
| HY5RS573225F |
256 GDDR3 SDRAM
|
Hynix Semiconductor
|
| K4J55323QG K4J55323QG-BC12 K4J55323QG-BC14 K4J5532 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
| S34MS01G2 S34MS02G2 S34MS04G2 |
1 Gbit/2 Gbit/4 Gbit SLC NAND Flash for Embedded
|
Cypress Semiconductor
|
| HYB18T1G800BF-2.5 HYB18T1G800BF-2.5F HYB18T1G800BF |
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
|
| HYB18T1G800AF-3S HYB18T1G400AFL-37 HYB18T1G400AFL- |
1 Gbit DDR2 SDRAM 1千兆位DDR2内存
POT 1.0K OHM 1/4 SQ CERM SL ST
|
Infineon Technologies A...
Infineon Technologies AG
|
| RX2.7GBIT/S TX2.7GBIT/S V23832-T2131-M101 V23832-T |
PAROLI 2 Tx AC, 2.7 Gbit/s 帕罗2个发送，交流2.7千兆/
Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 2.7 Gbit/s,
Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 2.7 Gbit/s, multistandard electrical interface
PAROLI 2 Tx AC, 1.25 Gbit/s
|
Infineon Technologies AG
|
| PC28F00AP30TFA PC28F00BP30EFA |
Numonyx? Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit
|
Micron Technology
|
| NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| HYB39S64160AT HYB39S64160BT HYB39S64160BT-7 |
64M SDRAM Component
4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M4× 1M× 16)同步动态RAM（用于高速图形场合）)
4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M4M x 16)同步动态RAM（用于高速图形场合）)
|
Infineon
SIEMENS AG
|
