| PART |
Description |
Maker |
| S34ML01G1 S34ML04G1 S34ML02G1 |
(S34ML01G1 - S34ML04G1) SLC NAND Flash Memory
|
Spansion
|
| ST6294M8 |
NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP
NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP
|
|
| K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AT49F8011-70CI AT49F8011-90CI AT49F8011T-90CC AT49 |
ATS-SSK 0525/110
Quadruple 2-Input Positive-NAND Gate 14-SO -40 to 85
Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PBGA48
8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Atmel Corp.
Atmel, Corp.
|
| K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K120 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
1M x 8 bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TC58NVG1S3HBAI4 |
SLC NAND
|
TOSHIBA
|
| TC58NVG0S3HBAI4 |
SLC NAND
|
TOSHIBA
|
| TH58NYG3S0HBAI4 |
SLC NAND
|
TOSHIBA
|
| TC58NVG1S3HTAI0 |
SLC NAND
|
TOSHIBA
|
| TC58NVG2S0FTAI0 |
SLC NAND
|
TOSHIBA
|
| TH58NVG4S0FBAID |
SLC NAND
|
TOSHIBA
|
