| PART |
Description |
Maker |
| HYS72D128321GBR-5-B HYS72D128321GBR-6-B HYS72D2562 |
184 - Pin Registered Double-Data-Rate SDRAM Module
|
Qimonda AG
|
| HYS72D128300GBR HYS72D128300GBR-5-B HYS72D128300GB |
184-Pin Registered Double Data Rate SDRAM Module
|
INFINEON[Infineon Technologies AG]
|
| HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块)
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块（2.584脚，512M的位寄存型的DDR - SDRAM内存模块余）
|
SIEMENS AG
|
| HYS64D128320HU-5-B HYS72D128320HU-5-B HYS64D64300H |
42184-Pin Unbuffered Double-Data-Rate Memory Modules
|
Qimonda AG
|
| HYMD512G726BF8N-D43 HYMD512G726BF8N-J HYMD512G726B |
Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Registered DIMM 1GB
|
http://
Hynix Semiconductor, Inc.
|
| HYS72D64020GU-7F-B HYS64D64020GU-8-B HYS72D64020GU |
184-Pin Unbuffered Dual-In-Line Memory Modules
RES 1.8K OHM 1/16W 5% 0402 SMD
184-Pin Unbuffered Dual-In-Line Memory Modules 184引脚缓冲双列内存模组
|
Infineon Technologies AG
Infineon Technologies A...
|
| K4D26323AA-GL |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| 3TB41-15 |
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Screw Termination
|
Honeywell
|
| NT512D72S8PB0G |
184 pin Unbuffered DDR DIMM
|
ETC
|
| GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM
1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
| MT8VDDT3264AG-40BC4 |
256MB, 512MB (x64, SR) 184-Pin DDR SDRAM UDIMM
|
Micron Technology
|
